On March 30, Xinlianxin (Wuhan) Semiconductor signed an agreement to launch its 3D Phase-Change Memory (PCM) R&D project in Wuhan Economic & Technological Development Zone (WEDZ).
The project will establish a research and development center to overcome storage technology bottlenecks by focusing on innovative PCM solutions. This cutting-edge technology will provide strong support for AI computing networks, data centers, and intelligent vehicles.
According to a representative from Xinlianxin Semiconductor, their PCM products achieve storage density and speed breakthroughs through material innovation and 3D stacking technology.
In addition to developing key components such as memory control chips and intelligent network card optical modules, the project plans to build a comprehensive industrial chain from chip design to module integration.
Xinlianxin Semiconductor has already established strategic partnerships with companies like Guangxi Techshine Electronics. Their R&D achievements will first be applied to AI servers and in-vehicle intelligent systems.
Industry experts predict that the industrialization of 3D phase-change memory could reshape the current storage market landscape and provide foundational technology support for cutting-edge fields such as 5G and the metaverse.
